G03 - GeSn Optoelectronics Device

Sunday, 9 October 2022: 10:30-12:10
Room 212 (The Hilton Atlanta)
Chairs:
Gianlorenzo Masini and Andreas Mai
10:30
Gesn Alloys: From Optical to Electrical Pumped Lasers
D. Buca (PGI-9, Forschungszentrum Juelich), M. El-kurdi (C2N, CNRS, Université Paris Sud), J. Witzens (RWTH Aachen), M. Oehme (Institute of Semiconductor Engineering, University of Stuttgart), G. Capellini (IHP – Leibniz-Institut für innovative Mikroelektronik), and D. Gruetzmacher (PGI-9, Forschungszentrum Juelich)
11:00
Evolution of Gesn Lasers Towards Photonic Integration into Practical Applications
Y. Kim (Nanyang Technological University), S. Assali (Ecole Polytechnique de Montreal), Y. Jung, D. Burt, L. Zhang, H. J. Joo (Nanyang Technological University), S. Koelling (École Polytechnique de Montréal), M. Chen (Nanyang Technological University), L. Luo, M. Atalla (École Polytechnique de Montréal), Z. Ikonic (University of Leeds), C. S. Tan (Nanyang Technological University), O. Moutanabbir (Ecole Polytechnique de Montreal), and D. Nam (Nanyang Technological University)
11:20
Gesnoi Laser Technology for Photonic-Integrated Circuits
D. Nam, H. J. Joo, Y. Kim, D. Burt, Y. Jung, L. Zhang, M. Chen, M. Luo, S. J. Parluhutan, D. H. Kang (Nanyang Technological University), C. Lee (Korea Advanced Institute of Science and Technology), S. Assali (Ecole Polytechnique de Montreal), B. Son (Nanyang Technological University), Z. Ikonic (University of Leeds), O. Moutanabbir (Ecole Polytechnique de Montreal), Y. H. Cho (Korea Advanced Institute of Science and Technology), C. S. Tan (Nanyang Technological University), and Y. C. Huang (Applied Materials)
11:40
Monolithic Integration of Gesn on Si for IR Camera Demonstration
M. Oehme (University of Stuttgart), Z. Yu (Institut für Mikroelektronik Stuttgart (IMS CHIPS)), M. Wanitzek (Institut für Halbleitertechnik (IHT), Universität Stuttgart), S. Epple, L. Schad (Institut für Mikroelektronik Stuttgart (IMS CHIPS)), M. Hack (Institut für Halbleitertechnik (IHT), Universität Stuttgart), J. Burghartz (Institut für Mikroelektronik Stuttgart (IMS CHIPS)), D. Schwarz (Institute of Semiconductor Engineering, University of Stuttgart), and M. Kaschel (Institut für Mikroelektronik Stuttgart (IMS CHIPS))