G03 - Epitaxy of GeSn

Sunday, 9 October 2022: 08:10-10:10
Room 212 (The Hilton Atlanta)
Chairs:
Gianlorenzo Masini and Jean-Michel Hartmann
08:10
Welcoming Remarks
08:15
(Si)GeSn Isothermal Multilayer Growth for Specific Applications Using GeH4 and Ge2H6
O. Concepción Díaz (Forschungszentrum Juelich), N. B. Søgaard (Aarhus University), O. Krause (Forschungszentrum Juelich), J. H. Bae (Forschungszentrum Jülich), T. Brazda, A. T. Tiedemann (Forschungszentrum Juelich), Q. T. Zhao (Forschungszentrum Jülich), D. Grützmacher, and D. Buca (Forschungszentrum Juelich)
08:45
Low Pressure Growth of Pseudomorphic Gesn with 16.7% Sn Incorporation
J. M. Grant, G. Abernathy, O. Olorunsola, S. Ojo, S. Amoha, E. Wanglia, S. Saha, A. Sabbar (University of Arkansas), W. Du (Wilkes University), M. Alher (University of Arkansas), B. Li (Arktonics LLC.), and S. Q. Yu (University of Arkansas)
09:05
Hydrogen-Assisted Molecular Beam Epitaxy of SiGeSn
D. Schwarz, J. Ziegler, H. S. Funk (Institute of Semiconductor Engineering, University of Stuttgart), J. Schulze (Chair of Electron Devices, FAU Erlangen-Nürnberg), and M. Oehme (Institute of Semiconductor Engineering, University of Stuttgart)
09:25
In-Situ Doping of Gesn and Sigesn for Optical and Electronic Devices
M. Frauenrath, L. Casiez (Université Grenoble Alpes, CEA, LETI), O. Concepción Díaz (Forschungszentrum Juelich), M. Veillerot, E. Nolot (Université Grenoble Alpes, CEA, LETI), D. Buca (PGI-9, Forschungszentrum Juelich), V. Reboud, and J. M. Hartmann (Université Grenoble Alpes, CEA, LETI)
See more of: G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 10
See more of: Electronic Materials and Processing
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