H04 - General

Tuesday, 11 October 2022: 08:50-12:00
Room 213 (The Hilton Atlanta)
Chairs:
Michael Dudley and Noboru Ohtani
08:50
Welcoming Remarks
09:00
(Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future
I. C. Kizilyalli, O. Blum Spahn (Advanced Research Projects Agency-Energy), and E. P. Carlson (Booz Allen Hamilton)
09:40
(Invited) Advances in High Power, High Voltage, Reliable GaN Products for Multi Kilo-Watt Power Conversion Applications.
C. Neufeld, G. Gupta, P. Zuk, and L. Shen (Transphorm Inc.)
10:20
Break
10:40
(Invited) Commercialization of AlN Substrates
R. T. Bondokov, S. P. Branagan (Crystal IS, Inc.), N. Ishigami (Asahi Kasei Corporation), J. Grandusky, K. Hogan, J. Mark, G. Q. Norbury, and J. Chen (Crystal IS, Inc.)
11:20
(Invited) Heterogeneous Materials Integration for Wide Bandgap Semiconductors
M. S. Goorsky, M. E. Liao, K. Huynh, Y. Wang, B. Carson (University of California, Los Angeles), L. Matto, and A. Bhalla-Levine (UCLA)
See more of: H04: Gallium Nitride and Silicon Carbide Power Technologies 12
See more of: Electronic and Photonic Devices and Systems
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