H04 - GaN Bulk & Epitaxy

Wednesday, 12 October 2022: 09:00-11:40
Room 213 (The Hilton Atlanta)
Chairs:
Andrew T. Binder and Balaji Raghothamachar
09:00
(Invited) Progress in Elucidating the Growth Process for Basic Ammonothermal GaN
S. Pimputkar (Lehigh University)
09:40
(Invited) Growth of Power-Grade GaN Substrates By the Near Equilibrium Ammonothermal (NEAT) Method and Expansion of the Size to 100 Mm
T. Hashimoto (SixPoint Materials, Inc.), E. Letts, D. Key, B. Jordan, and R. Godlewski (SixPoint Materials)
10:20
Break
10:40
(Invited) Optical Characterization of Bulk GaN Substrates and Homoepitaxial Films
J. A. Freitas Jr. (Naval Research Laboratory), J. C. Culbertson (NRL), J. K. Hite (Naval Research Laboratory), J. Gallangher, M. Ebrish (NRL), M. Mastro, and T. J. Anderson (Naval Research Laboratory)
11:20
Investigation of the Area Defects in Ammonothermal Grown Gallium Nitride Substrate Wafers
Y. Liu, H. Peng, Z. Chen, Q. Cheng, S. Hu, B. Raghothamachar, and M. Dudley (Stony Brook University)
See more of: H04: Gallium Nitride and Silicon Carbide Power Technologies 12
See more of: Electronic and Photonic Devices and Systems
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