H04 - GaN Devices

Wednesday, 12 October 2022: 14:00-17:10
Room 213 (The Hilton Atlanta)
Chairs:
Siddha Pimputkar and Jaime A. Freitas Jr.
14:00
(Invited) Vertical Gallium Nitride Mosfets for Electric Drivetrains
A. T. Binder, A. A. Allerman, C. E. Glaser, L. Yates, B. D. Rummel, T. Smith, J. R. Dickerson, J. Steinfeldt, G. Pickrell, P. Sharps, R. J. Kaplar (Sandia National Laboratories), and J. A. Cooper (Sonrisa Research)
14:40
(Invited) The Challenges of Overcoming Defects in GaN Hemts for Operation in Extreme Environments
B. Setera (MSE Department, University of Maryland, College Park MD, 20742) and A. Christou (University of Maryland Mechanical Engineering Department)
15:20
Break
15:50
(Invited) Vertical GaN Diodes: Effect of Growth Parameters, Indium Surfactants, and Device Development for High-Power Electronics
J. S. Speck, E. Farzana, and K. S. Qwah (University of California Santa Barbara)
16:30
(Invited) Micromechanical Aspects of GaN Hemt Performance and Reliability
M. A. J. Rasel (Penn State University), N. Al-Mamun, S. Stepanoff (Pennsylvania State University), Z. Islam (Bowling Green State University), A. Haque, D. Wolfe (Penn State University), F. Ren, and S. J. Pearton (University of Florida)
See more of: H04: Gallium Nitride and Silicon Carbide Power Technologies 12
See more of: Electronic and Photonic Devices and Systems
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