H04 - SiC Technologies

Tuesday, 11 October 2022: 16:00-18:00
Room 213 (The Hilton Atlanta)
Chairs:
Lisa M Porter and Rafael Dalmau
16:00
Quantitative Analysis of Dislocations in 4H-SiC Wafers Using Synchrotron X-Ray Topography with Ultra-High Angular Resolution
H. Peng, Z. Chen, Y. Liu, Q. Cheng, S. Hu, B. Raghothamachar (Stony Brook University), X. Huang, L. Assoufid (Argonne National Lab), and M. Dudley (Stony Brook University)
16:20
Investigation into the Influence of Substrate Dislocations in 4H-SiC on the Subsequent Epitaxy and Resultant Device Performance
D. M. Hamann, S. Sunkari, J. Justice, and H. Das (onsemi)
16:40
Strain Analysis of High Energy Implanted 4H-SiC Epiwafer By Synchrotron X-Ray Plane Wave Topography
Z. Chen, Y. Liu, H. Peng, Q. Cheng, S. Hu, B. Raghothamachar, M. Dudley (Stony Brook University), R. Ghandi, S. Kennerly (GE Research Center), and P. Thieberger (Brookhaven National Laboratory)
17:00
Cost-Effective Formation of Ti/Ni/Ti/Au Ohmic Contacts to N-Type SiC Using SiO2 Encapsulation Layer during Phosphorous Implant Activation
A. Shimbori and A. Q. Huang (University of Texas at Austin)
17:20
Effective Penetration Depths Investigation on Synchrotron X-Ray Topographic Images of Basal Plane Dislocations in 4H-SiC Crystals through Ray-Tracing Simulation
Q. Cheng, H. Peng, S. Hu, Y. Liu, Z. Chen, B. Raghothamachar, and M. Dudley (Stony Brook University)
17:40
Lifetime Prediction of SiC Power Module By Using Time-Series Analysis of Acoustic Emission during Power Cycling Test
Z. Zhang (Institute of Scientific and Industrial Research, Osaka University), H. Sato (Osaka university), Y. Matsubar, A. Suetake (Osaka University), N. Wakasugi (Yamato Scientific Co., Ltd.), C. Chen, Y. Sakurai, and K. Suganuma (Osaka University)
See more of: H04: Gallium Nitride and Silicon Carbide Power Technologies 12
See more of: Electronic and Photonic Devices and Systems
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