H01 - Wide and Ultrawide Bandgap Materials and Devices

Monday, 10 October 2022: 08:30-10:20
Room 213 (The Hilton Atlanta)
Chairs:
Stephanie Tomasulo and Sujitra Pookpanratana
08:30
(Invited) III-Oxide/III-Nitride Heterostructures for Power Electronics and Optoelectronics Applications
H. Fu (Iowa State University)
09:00
Thermal Optimization of AlGaN/Diamond Interfaces Via Tuning Al-Concentration and N-Implantation
H. T. Aller (University of Maryland), C. Cress, M. Tadjer, T. J. Anderson, T. Feygelson, B. Pate, K. D. Hobart (Naval Research Laboratory), A. Khan (University of South Carolina), S. Chowdhury (University of California Davis), and S. Graham (University of Maryland)
09:20
Focused Ion Beam (FIB) Ga+ Implantation Damage on β-Ga2O3 and Its Recovery after Annealing Treatment
X. Xia, L. Jian-Sian, M. Xian, F. Ren (University of Florida), N. Al-Mamun (Pennsylvania State University), M. A. J. Rasel (The Pennsylvania State University), A. Haque (Penn State University), and S. J. Pearton (University of Florida)
09:40
Device-Level Impact of Highly Anisotropic Thermal Conductivity of AlN/GaN Digital Alloys
H. T. Aller (University of Maryland), A. Chaney (Air Force Research Laboratory), T. Pfeifer (University of Virginia), K. Averett, T. Asel (Air Force Research Laboratory), P. E. Hopkins (Dept. Mechanical & Aerospace Eng., University of Virginia, VA), S. Mou (Air Force Research Laboratory), and S. Graham (University of Maryland)
10:00
4.7 Kv Reverse Breakdown Voltage Ultra-Thin Double-Layered NiO/β-Ga2O3 p-n Junction Rectifiers
J. S. Li, C. C. Chiang, X. Xia, T. J. Yoo, F. Ren, H. Kim, and S. J. Pearton (University of Florida)
See more of: H01: State-of-the-Art Program on Compound Semiconductors 65 (SOTAPOCS 65)
See more of: Electronic and Photonic Devices and Systems
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