H02 - P-channel and Organic TFTs

Tuesday, 11 October 2022: 08:00-09:50
Room 214 (The Hilton Atlanta)
Chairs:
Hideo Hosono and Laurie Calvet
08:00
(Invited) Achieving Lower Power Logic Using P-Type Metal Oxide Thin Film Transistors
N. C. A. van Fraassen, S. Han, K. Niang, and A. J. Flewitt (Electrical Engineering Division, University of Cambridge)
08:30
Fabrication and Characterization of p-Type Thin-Film Transistors Using Sete Active Layer Deposited by Pulsed Laser Ablation
K. Choi, S. Nam, H. Oh, J. Y. Oh, and S. H. Cho (Electronics and Telecommunications Research Institute)
08:50
The Effect of a Copolymer Interfacial Layer on the Performance of Organic Thin Film Transistors
E. N. Tarekegn, M. Seyedi, I. Luzinov, and W. R. Harrell (Clemson University)
09:10
UV/Ozone Based Facile Surface Modulation Technique for Efficient Organic Thin Film Transistor
S. Shaharukh and A. Dhar (IIT KHARAGPUR)
09:30
Effect of Active Layer Thickness on Organic Thin-Film Transistors
V. Moorthy and V. M. Srivastava (University of KwaZulu-Natal)
See more of: H02: Thin Film Transistors 16 (TFT 16)
See more of: Electronic and Photonic Devices and Systems
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