D04 - Session 1

Monday, 10 October 2022: 08:00-12:30
Room 311 (The Hilton Atlanta)
08:00
Welcoming Remarks
08:10
(Invited) Surface Chemistry Control in Advanced Plasma Processes
P. Ventzek, S. Sridhar, Y. M. Chen, R. Longo, G. Hartmann, J. Zhao, J. Shinagawa, and Z. Chen (Tokyo Electron America, Inc.)
08:50
(Invited) Plasma Technology in Surface Engineering: From Super-Hydrophilic to Super-Hydrophobic Materials
A. Nikiforov (Universiteit Ghent), R. Morent (Ghent University), and C. Ma (Universiteit Ghent)
09:30
Low Temperature Semiconductor Device Processing
T. Lill, A. Fischer (Lam Research Corporation), I. Berry, and M. Shen (Lam Research)
09:50
Break
10:10
(Invited) Rapid Nanometer Scale Patterning Using New High-Sensitivity, Dry-Develop Resists
A. Engler, J. Schwartz, and P. Kohl (Georgia Institute of Technology)
10:50
(Invited) Thermal Etching of Metal Oxides: Mechanisms Revealed By Quadrupole Mass Spectrometry
J. L. Partridge and S. M. George (University of Colorado Boulder)
11:30
Enabling High Aspect Ratio 3D NAND Scaling through Deposition and Etch Co-Optimization (DECO)
M. Shen, J. Hoang (Lam Research Corporation), H. Chi (Lam Research Corp.), A. Routzahn (Lam Research Corporation), J. Church, P. S. Subramonium, R. Puthenkovilakam, S. R. Reddy, S. Bhadauriya, S. Roberts (Lam Research Corp.), T. Lill (Lam Research Corporation), and G. Kamarthy (Lam Research Corp.)
11:50
(Invited) Synthesis, Functionalization, and Three-Dimensional Structuring of Carbon Nanomaterials By Gas-Liquid Interface Plasma
H. Kondo, T. Tsutsumi, K. Ishikawa, M. Sekine, and M. Hori (Nagoya University)
See more of: D04: Plasma and Thermal Processes for Materials Modification, Synthesis, and Processing 4
See more of: Dielectric Science and Materials
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