D04 - Session 2

Tuesday, 11 October 2022: 08:00-12:00
Room 311 (The Hilton Atlanta)
08:00
Asymmetric Ba0.5Sr0.5Co0.8Fe0.2O3-Δ Membrane for Oxygen Permeation: Synergetic Fabrication By Magnetron Sputtering Deposition and Selective Laser Annealing
B. Mewafy, B. I. Arias Serrano, J. Wallis (Leibniz Institute for Plasma Science and Technology (INP)), O. Ravkina, R. Kriegel (Fraunhofer-Institut für Keramische Technologien und Systeme IKTS), J. Wartmann (Zentrum für BrennstoffzellenTechnik GmbH), and A. Kruth (Leibniz Institut für Plasma und Technology)
08:40
Plasma-Assisted Anion Exchange Reactions in Thermally Grown Copper Oxide Nanowires
M. Kosicek, J. Zavašnik, and U. Cvelbar (Jožef Stefan Institute, Jožef Stefan International Postgraduate School)
09:20
Optical and Mechanical Properties of Europium-Doped Sicn Thin Films Prepared By Integrated Ecr-PECVD and Magnetron Sputtering
F. Azmi (McMaster University), B. Ahammou (Univ Rennes, Institut FOTON—UMR 6082, F-35000 Rennes, France), P. Bhattacharyya, and P. Mascher (McMaster University)
09:40
Break
10:00
(Invited) Comparison of Compositional, Optical and Mechanical Properties of Sicn Thin Films Prepared By Ecr-PECVD with Different Hydrocarbon Precursors
A. Abdelal and P. Mascher (McMaster University)
10:40
The Effect of Oxygen Plasma on the ZnO Growth on Polymer Substrates during Plasma-Enhanced Atomic Layer Deposition
L. Demelius (Graz University of Technology), M. Blatnik (Brno University of Technology), K. Unger (Graz University of Technology), P. Parlanti, M. Gemmi (Istituto Italiano di Tecnologia), and A. M. Coclite (Graz University of Technology)
11:00
Improved Adhesion of Copper Seed Layer Using Vacuum Ultraviolet Light for Direct High-Speed Sputtering
S. Endo (Ushio Inc.)
11:20
Uniformity and Profile Improvement of Fin Etching Process at Wafer Extreme Edge for Finfet Mass Production
J. Song, X. Ke, Z. Li, E. N. Zhang, S. Ji, Z. Zhao, C. Zheng (Semiconductor Manufacturing International Corporation), and H. Zhang (Semiconductor Equipment Association of Japan)
11:40
Improved Iso-Dense Etch Bias Loading through Etch Process
Z. Zhao, X. Ke, F. Li, J. Song, S. Ji, and H. Zhang (Semiconductor Manufacturing International Corporation)
See more of: D04: Plasma and Thermal Processes for Materials Modification, Synthesis, and Processing 4
See more of: Dielectric Science and Materials
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