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Properties and Structure of Electroless Deposited Rhenium-Rich Re-Co Thin Films

Wednesday, 3 October 2018
Universal Ballroom (Expo Center)
A. Inberg (University Tel Aviv)
Unique combination of rhenium (Re) mechanical and physical properties makes it very attractive material for variety of applications. Pure Re does not have a ductile-to-brittle transition temperature. Compared to other refractory metals, Re has the greatest tensile strength and excellent creep resistance over a wide range of temperatures (up to ~2000 °C). Moreover, Re does not form stable carbides. Thus, it is potentially attractive coating on different carbon materials. Re-based alloy coatings have been produced so far mainly by chemical vapor deposition (CVD) and electroplating. Electroless deposition is relatively simple and low cost method for thin metallic and metal alloy films preparation on conductive and nonconductive surfaces. The ability of electroless plating to coat the inside of holes and recesses without using external current source or vacuum technology equipment makes it an ideal coating technology for many uses. In this study, high Re content (more than 65 at.%) Re-Co coatings were prepared by electroless deposition on a functionalized SiO2 substrate and their morphology, composition, structure and properties were studied. The obtained films were characterized by HRSEM, AFM, XPS, XRD and EBSD methods. It was shown that as deposited films are amorphous with average microhardness of 620 HV that is higher than known in literature for binary Co-Re alloys. Crystalline hcp structure of Re-Co coating was detected only after annealing at 550 oC for 1 h in vacuum. Thin coatings (250-500 nm) have demonstrated good corrosion protection of copper in salt medium reducing corrosion current at list by one order of magnitude. The annealed deposits have shown improved mechanical and electrical properties. Such films exhibit ferromagnetism and could be applied in mobile magnetic components where soft-magnetic response combined with mechanical stability is required (MEMS devices).