1269
Metal Junction Interface and Surface Transport Properties of Halide Perovskite

Wednesday, 3 October 2018: 09:00
Universal 20 (Expo Center)
C. H. Lin, T. Y. Li, B. Cheng, J. J. Ke, T. C. Wei (King Abdullah University of Science and Technology), and J. H. He (KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY)
Trihalide perovskites have arrived at the forefront of next-generation solar technology due to their impressive light absorption coefficients, long carrier lifetimes, high carrier mobility, and intense photoluminescence. The metal/perovskite junction interface and carrier transport behaviors along the perovskite surface were studied on single crystalline CH3NH3PbBr3 by employing transfer length method with lithography patterned Au, Pt, and Ti electrodes. The charge pinning effect and image force were observed at perovskite junction interface for different contact metals. Furthermore, the surface charges at perovskite surface can result in the thermally activated carrier transport with activation energy of 0.2 eV when temperature is above 207 K; meanwhile variable range hopping dominates the transport below 207 K. This fundamental study of metal contact and surface transport of halide perovskite will guide the future electronic applications, and are especially important for low-dimensional perovskites which have high specific surface area.