The concept of micron-sized emitter (µ-emitter) arrays in a LED chip for advanced displays has been envisioned and realized about a decade and half-ago [1-3]. Since then, these arrays have been fabricated in smaller dimensions of a chip with a very high density. While there has been a significant progress in the fabrication technology of pixelated LEDs of InGaN blue LEDs, there has been scant research addressing the pixelation of LEDs with a phosphor layer for down-conversion of the LED emission.

In this talk, we will describe an approach where an ultra-thin inorganic phosphor layer is fabricated and transferred onto both pixelated as well as non-pixelated LEDs. We will also explain the importance of developing a suitable sacrificial layer while maintaining the desired photoluminescence quantum yield of the phosphor for its successful integration on a LED. It will be shown how important it is to consider the melting temperature, bonding energy, thermal conductivity and optical bandgap of the sacrificial layer to enable successful integration of phosphor thin films to LEDs for solid state lighting applications [4].

1. S.-X. Jin et al., Appl. Phys. Lett. 76, 631 (2000).
2. H.X. Jiang et al., Appl. Phys. Lett. 78, 1303 (2001).
3. H.X. Jiang et al., US Patent 6,410,940 (2002).
4. D.C. Kundaliya et al., ECS Journal of Solid State Science and Technology, 7, R3046 (2018).