The effects of a Cu-based additive and nano-Gd-doped ceria (GDC) sol on the sintering temperature for the construction of solid oxide cells (SOCs) were investigated. A GDC buffer layer with 0.25–2 mol% CuO as a sintering aid was prepared by reacting GDC powder and a CuN₂O₆ solution, followed by heating at 600 °C. The sintering of the CuO-added GDC powder was optimized by investigating linear shrinkage, microstructure, grain size, ionic conductivity, and activation energy at temperatures ranging from 1000 to 1400 °C. The sintering temperature of the CuO–GDC buffer layer was decreased from 1400 °C to 1000 °C by adding the CuO sintering aid at levels exceeding 0.5 mol%. The ionic conductivity of the CuO–GDC electrolyte was maximized at 0.5 mol% CuO. However, the addition of CuO did not significantly affect the activation energy of the GDC buffer layer. Buffer layers with CuO-added GDC or nano-GDC sol-infiltrated GDC were fabricated and tested in co-sintering (1050 °C, air) with La_0.6Sr_0.4Co_0.2Fe_0.8O_3-δ (LSCF). In addition, SOC tests were performed using button cells and flat tubular type five-cell stacks. The button cell exhibited the maximum power density of 0.89 W cm⁻² in solid oxide fuel cell (SOFC) mode. The stack operated more than 1,000 h in solid oxide electrolysis cell (SOEC) mode.