GaN Materials and Devices

Simoen, E.

Thursday, 4 October 2018: 14:00-15:30

Universal 24 (Expo Center)

Chairs:

E. Simoen and Dimitrios Skarlatos

14:00

1191

(Invited) Vacancy-Type Defects and Their Carrier Trapping Properties in GaN Studied by Monoenergetic Positron Beams

A. Uedono (University of Tsukuba), T. Tanaka, N. Ito, K. Nakahara (ROHM Co. Ltd), W. Egger (Universität der Bundeswehr München), C. Hugenschmidt (Technische Universität München), S. Ishibashi (AIST), and M. Sumiya (National Institute for Materials Science)

14:30

1192

(Invited) GaN Buried Channel Normally Off MOSHEMT: Design Optimization and Experimental Integration on Silicon Substrate

R. Soman (Indian Institute of Science,), M. Sharma, N. Ramesh, D. Nath, R. Muralidharan, K. N. Bhat, S. Raghavan (Indian Institute of Science), and N. Bhat (Indian Institute of Science, Bangalore, India)

15:00

1193

Mechanical Exfoliation of Plate-stratiform Structured Bi₁₂O₁₇Cl₂ for Enhanced Photocatalytic Performance

M. Zhao, Z. Guo, C. Fu, S. Wang, L. Zhao (Qingdao University of Science and Technology), and L. Dong (Hamline University, Qingdao University of Science and Technology)

15:20

Concluding Remarks

See more of: H02: High Purity and High Mobility Semiconductors 15
See more of: Electronic and Photonic Devices and Systems

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