ReRAM

Wednesday, 3 October 2018: 10:00-12:00
Universal 7 (Expo Center)
Chairs:
Gennadi Bersuker and Yuta Saito
10:00
735
10:40
736
(Invited) Novel Solid State Oxide Components and Operation for Rram
J. C. Gonzalez-Rosillo and J. L. M. Rupp (Massachusetts Institute of Technology)
11:20
737
Mechanism of Forming-Free Cu2o Solid-Electrolyte Based Conductive-Bridge Random Access Memory
S. M. Jin, K. H. Kwon, D. W. Kim, H. J. Kim, H. M. Yang, J. Y. Kim, and J. G. Park (Hanyang University)
11:40
738
Control of Current Compliance in Rram: Optimized Vs. Minimized Parasitics
P. R. Shrestha (National Institute of Standards and Technology, Theiss Research), D. M. Nminibapiel (National Institute of Standards and Technology (NIST)), D. Veksler (The Aerospace Corporation), J. P. Campbell (National Institute of Standards and Technology), J. T. Ryan (National Institute of Standards and Technology (NIST)), H. Baumgart (Old Dominion University, ECE Department), and K. P. Cheung (National Institute of Standards and Technology (NIST))