SiC Technologies 1

Wednesday, 3 October 2018: 09:00-12:00
Universal 5 (Expo Center)
Chairs:
Andrew A. Allerman and Eric P Carlson
09:00
1287
(Invited) Growing Large Diameter 4H SiC Boules – Furnace, PVT Growth and Characterization
G. Dhanaraj, K. Motepally, S. Hemstad, and L. Rowland (Aymont Technology Inc)
09:40
1288
Evaluation of Model for Determining Nitrogen Doping Concentration from Resultant Strain in Heavily Doped 4H-SiC Crystals
T. Ailihumaer, Y. Yang, J. Guo, B. Raghothamachar, and M. Dudley (Stony Brook University)
10:00
1289
Significant Structural Distortion in the Surface Region of 4H-SiC Induced By Thermal Oxidation and Recovered By Ar Annealing
K. Kita and A. D. Hatmanto (The University of Tokyo)
10:20
Break
10:40
1290
(Invited) Characterization of UV Excitation Accelerated Material Changes on as-Grown SiC Epitaxial Layers and Their Impact on Defect Detection
H. Das, S. Sunkari, J. Justice, A. Konstantinov, K. Gumaelius, J. O. Svedberg, and F. Allerstam (ON Semiconductor)
11:20
1291
In-Situ Synchrotron X-Ray Topography Study on the Stress Relaxation Process in 4H-SiC Homoepitaxial Layers
J. Guo, T. Ailihumaer, H. Peng, B. Raghothamachar, and M. Dudley (Stony Brook University)
11:40
1292
Development of High Temperature Operation SiC Power Module
S. Sato, F. Kato (AIST), H. Tanisawa (AIST, Sanken Electric Co., Ltd.), K. Koui (AIST, Calsonic Kansei Corp.,), K. Watanabe (AIST), Y. Murakami (NISSAN MOTOR CO., LTD.), H. Sato, and H. Yamaguchi (AIST)
See more of: H05: Gallium Nitride and Silicon Carbide Power Technologies 8
See more of: Electronic and Photonic Devices and Systems
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