Tuesday, 2 October 2018: 08:00-11:20
Universal 18 (Expo Center)
Chairs:
Jeffrey Mark Halpern
and
Svitlana Pylypenko
08:20
Photoelectrochemical Properties of p- and n- Type 4H-SiC Epilayers: Doping Concentration Dependence and Dopant Selectivity
S. P. Pavunny, R. L. Myers-Ward (U.S. Naval Research Laboratory, Washington DC), K. Daniels (University of Maryland, College Park, MD), K. Sridhara (Texas A&M University, College Station, TX, U.S. Naval Research Laboratory, Washington DC), A. K. Boyd, M. T. DeJarld, and D. K. Gaskill (U.S. Naval Research Laboratory, Washington DC)
08:40
In Search of the Active Chlorine Species on Ti/ZrO2-RuO2-Sb2O3 Anodes Using Dems and XPS
R. E. Palma Goyes (INSTITUTO POLITECNICO NACIONAL), J. Vazquez-Arenas (Universidad Autónoma Metropolitana Iztapalapa.), C. Ostos (Universidad de Antioquia), A. Manzo-Robledo (Escuela Superior De Ingeniería Química, INSTITUTO POLITECNICO NACIONAL), I. Romero-Ibarra (INSTITUTO POLITECNICO NACIONAL), J. Calderón (Universidad de Antioquia), and I. González (Universidad Autónoma Metropolitana iztapalapa)