TFT Materials 2

Tuesday, 2 October 2018: 08:00-09:30
Universal 6 (Expo Center)
Chair:
Mamoru Furuta
08:00
1205
(Invited) Development of Ultra-Wide Bandgap Amorphous Oxide Semiconductors for Future Electronics
J. Kim and H. Hosono (Tokyo Institute of Technology)
08:30
1206
(Invited) Depth Analysis of Near Valence Band Maximum Defect States in Amorphous Oxide Semiconductors: Amorphous in-Ga-Zn-O
K. Ide, M. Ota, T. Katase, H. Hiramatsu (Tokyo Institute of Technology), S. Ueda (National Institute for Materials Science), H. Hosono, and T. Kamiya (Tokyo Institute of Technology)
09:00
1207
(Invited) Understanding the Correlation of Molecule Structure and Charge Transport Properties in Organic Thin-Film Transistors
Y. Hu (School of Physics and Electronics, Hunan University) and L. Liao (School of Physics and Technology, Wuhan University)
See more of: H03: Thin Film Transistor Technologies 14 (TFTT 14)
See more of: Electronic and Photonic Devices and Systems
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