TFT Devices, Modeling, and Reliability 1

Pribat, Didier

Tuesday, 2 October 2018: 10:00-11:50

Universal 6 (Expo Center)

Chair:

Didier Pribat

10:00

1208

(Invited) Thin Film Transistor Response to Terahertz Radiation

M. Shur (Rensselaer Polytechnic Institute)

10:30

1209

(Invited) Hydrogen-Related Trap States Induced during Fabrication Process and Annealing Effects in Amorphous in-Ga-Zn-O Thin Film Transistors

M. Ochi, A. Hino, H. Goto, K. Hayashi, and T. Kugimiya (KOBE STEEL, LTD.)

1210

(Invited) Instability Phenomena Observed in a-IGZO Thin Film Transistors (Cancelled)

11:30

1211

Reliability of Al₂O₃/In-Si-O-C Thin-Film Transistors with an Al₂O₃ Passivation Layer under Gate-Bias Stress

K. Kurishima (Meiji University), T. Nabatame (National Institute for Materials Science), T. Onaya (Meiji University), K. Tsukagoshi, A. Ohi, N. Ikeda, T. Nagata (National Institute for Materials Science), and A. Ogura (Meiji University)

See more of: H03: Thin Film Transistor Technologies 14 (TFTT 14)
See more of: Electronic and Photonic Devices and Systems

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