TFT Devices, Modeling, and Reliability 2

Tuesday, 2 October 2018: 14:00-15:20
Universal 6 (Expo Center)
Chair:
Feng Yan
14:00
1212
(Invited) Channel Length Dependence of Mechanical Strain for Flexible (a-IGZO) TFT
A. Rahaman, M. M. Hasan, M. M. Billah, and J. Jang (Kyung Hee University)
14:30
1213
A 2D Empirical Model for On-State Operation of Scaled IGZO TFTs Exemplifying the Physical Response of TCAD Simulation
K. D. Hirschman, T. Mudgal, E. Powell (Rochester Institute of Technology), and R. G. Manley (Corning Research and Development Corporation)
14:50
1214
(Invited) Illumination Light Wavelength Effects on Double-Gate a-IGZO Thin Film Transistor with Top-Gate-to-Source/Drain Offset Structure
J. Jiang (Texas A&M University, Shenyang University of Technology), Y. Kuo (Texas A&M University), T. C. Chang, and H. C. Chiang (National Sun Yat-Sen University)
See more of: H03: Thin Film Transistor Technologies 14 (TFTT 14)
See more of: Electronic and Photonic Devices and Systems
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