Oxide TFT Fabrication Processes 1

Tuesday, 2 October 2018: 15:50-17:20
Universal 6 (Expo Center)
Chair:
Sung Haeng Cho
15:50
(Invited) High Density IGZO Film for Highly Reliable TFT By Inductively Coupled Plasma Sputtering Technology in Low Temperature Process
D. Matsuo, S. Kishida, Y. Setoguchi, Y. Andoh (Nissin Electric Co., Ltd.), R. Miyanaga, M. N. Fujii, and Y. Uraoka (Nara Institute of Science and Technology)
16:20
(Invited) Oxide TFT Fabrication with Various Low Temperature Techniques
S. Hong, H. J. Kim, I. S. Lee, H. T. Kim, and H. J. Kim (Yonsei University)
16:50
(Invited) Fabrication Technique for Low-Temperature Aqueous Solution-Processed Oxide Thin-Film Transistors
M. Miyakawa, M. Nakata, H. Tsuji, and Y. Fujisaki (NHK Science & Technology Research Laboratories)