Evaluation of a Metal Supported Ni-YSZ / YSZ / La2NiO4 IT-SOFC Elaborated by Physical Surface Deposition Processes
GDC diffusion barrier layers were deposited by RMS in order to limit the deleterious interaction between active layers in use.
Different cells with RMS LNO, SP LNO, and RMS LNO + SP LNO were produced and tested in a complete cell bench at 973 K. Impedance Spectroscopy and Voltametry measurements were performed on these samples to assess their electrochemical characteristics and performances.
The electrochemical resistances of these cells are too high and their performances are still lower than the literature ones. Analyses of the samples after the electrochemical tests permit to identify the density of the RMS LNO layer as the limiting factor lowering the cathodic electrochemical reaction. The sintering step performed on complete cells with SP LNO deteriorates the layers deposited by RMS as well as the metallic support explaining these performances. Nevertheless, using LNO bonding layer manufactured by RMS seems to be an interesting way to improve the polarization resistance of the cell.
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