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Growth and Characterization of Al0.2In0.1Ga0.7N on AIN/Sapphire Substrates by Rf-Magnetron Sputtering for Ultraviolet Light-Emitting Diodes

Tuesday, May 14, 2013: 15:40
Spruce, Mezzanine Level (Sheraton)
Kidus Yohannes Alemu, PhD candidate , National Taiwan University of Science and Technology, Taipei, Taiwan

Abstract:

See more of: Optoelectronic Devices
See more of: E9: Wide-Bandgap Semiconductor Materials and Devices 14
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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