Optoelectronic Devices

Tuesday, May 14, 2013: 14:00-16:20
Spruce, Mezzanine Level (Sheraton)
Chairs:
J. Bardwell and Zia Karim
14:00
929
Strong Visible Light Emission from Zinc-Blende InGaN/GaN Pn Junction on Silicon Substrate
Suzuka Nishimura, Ph.D, Solartes Lab.; Muneyuki Hirai, Master, Solartes Lab.; Hiroshi Nagayoshi, Ph.D, Tokyo National College of Technology; Kazutaka Terashima, Ph.D, Shonan Institute of Technology
14:20
930
Nonradiative Recombination Mechanism in Phosphor-Free GaN-Based Nanowire White Light Emitting Diodes and the effect of Ammonium Sulfide Surface Passivation
Hieu Pham Trung Nguyen, PhD, McGill University; Mehrdad Djavid, McGill University; Zetian Mi, McGill University
14:40
931
InGaN LEDs Grown on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes
Hsu-Hung Hsueh, National Chung Hsing University; Sin-Liang Ou, National Chung Hsing University; Chiao-Yang Cheng, Wafer Works Optronics Corporation; Dong-Sing Wuu, Dr., Department of Materials Science and Engineering, National Chung Hsing University; Ray-Hua Horng, Dr., Graduate Institute of Precision Engineering, National Chung Hsing University
15:00
932
Enhanced Light Extraction of InGaN-Based Light-Emitting Diodes by ZnO Nanorod Arrays
Yu-Hsuan Hsiao, National Taiwan University; Jr-Hau He, National Taiwan University
15:20
933
Electrodeposited Wide-Bandgap Semiconducting ZnO and CuSCN Thin Films and Nanowires for Interface Engineering of Polymer Solar Cells
Cyril Chappaz-Gillot, CEA-Liten; Solenn Berson, CEA-Liten; Sylvia Sanchez, CEA-Leti; Raul Salazar, CEA-Leti; Balthazar Lechêne, CEA-Liten; Dmitry Aldakov, CEA-INAC; Vincent Delaye, CEA-Leti; Stéphane Guillerez, CEA-Liten; Valentina Ivanova, CEA-Leti
15:40
934
16:00
Break