Doping Issues

Tuesday, May 14, 2013: 14:00-16:20
Conference Room F, Mezzanine Level (Sheraton)
Chair:
Blas Garrido, Professor
14:00
793
(Invited) Doping Silicon Dielectrics with Silicon, Cerium and Oxygen Via Ion Implantation
A. P. Knights, McMaster University; Rachel M. Savidge, McMaster University; Matthew P. Halsall, The University of Manchester; Iain Forbes Crowe, The University of Manchester
14:40
794
(Invited) N- and p-type Impurity Co-Doped and Compensated Silicon Nanocrystals in Silicate and in Solution
Minoru Fujii, Kobe University
15:20
795
(Invited) Optical and Magnetic Properties of Defective MgO Microcrystals
Takashi Uchino, Kobe University
16:00
Break
See more of: E3: Nanocrystal Embedded Dielectrics for Electronic and Photonic Devices
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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