931
InGaN LEDs Grown on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes

Tuesday, May 14, 2013: 14:40
Spruce, Mezzanine Level (Sheraton)
Hsu-Hung Hsueh , National Chung Hsing University
Sin-Liang Ou , National Chung Hsing University
Chiao-Yang Cheng , Wafer Works Optronics Corporation
Dong-Sing Wuu, Dr. , Department of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan
Ray-Hua Horng, Dr. , Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung, Taiwan

Abstract:

  • E9-0931 (402.1KB) - Abstract Text
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See more of: E9: Wide-Bandgap Semiconductor Materials and Devices 14
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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