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ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology
ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology
Wednesday, May 15, 2013: 09:30
Provincial Ballroom North, Second Floor (Sheraton)
Abstract:
- E2-0759 (42.5KB) - Abstract Text