911
Growth Characteristics and Dielectric Properties of ALD-Ta2O5 Thin Film Using TaCl5 Precursor

Wednesday, May 15, 2013: 15:40
Essex Ballroom, Mezzanine Level (Sheraton)
Chin Moo Cho , Samsung Electronics Co., Ltd., Hwaseong-city, Gyeonggi-do, South Korea
Sang Yeol Kang , Samsung Electronics Co., Ltd.
Jae Hyoung Choi , Samsung Electronics Co., Ltd.
Jae-soon Lim , Samsung Electronics Co., Ltd.
Su Hwan Kim , Samsung Electronics Co., Ltd.
Younsoo Kim , Samsung Electronics Co., Ltd.
Cha-Young Yoo , Samsung Electronics Co., Ltd.
Ho-Kyu Kang , Samsung Electronics Co., Ltd.

Abstract:

See more of: Film and Structure Growth on Semiconductors
See more of: E7: Symposium on Processes at the Semiconductor Solution Interface 5
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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