Film and Structure Growth on Semiconductors

Wednesday, May 15, 2013: 15:00-16:20
Essex Ballroom, Mezzanine Level (Sheraton)
15:00
909
Mechanism of Polyphosphazene Like Film Formation on InP in Liquid Ammonia (218 K)
Christian Njel, PhD student, University of Versailles UMR 8180-Institut Lavoisier de Versailles (78000) France; Anne-Marie Goncalves, University of Versailles UMR 8180-Institut Lavoisier de Versailles (78000) France; Damien Aureau, University of Versailles UMR 8180-Institut Lavoisier de Versailles (78000) France; Dimitri Mercier, University of Versailles UMR 8180-Institut Lavoisier de Versailles (78000) France; Arnaud Etcheberry, University of Versailles UMR 8180-Institut Lavoisier de Versailles (78000) France
15:20
910
Sensitization of Single Crystal Semiconductors with Dyes and Quantum Dots
Bruce A Parkinson, PhD, University of Wyoming
15:40
911
Growth Characteristics and Dielectric Properties of ALD-Ta2O5 Thin Film Using TaCl5 Precursor
Chin Moo Cho, Samsung Electronics Co., Ltd.; Sang Yeol Kang, Samsung Electronics Co., Ltd.; Jae Hyoung Choi, Samsung Electronics Co., Ltd.; Jae-soon Lim, Samsung Electronics Co., Ltd.; Su Hwan Kim, Samsung Electronics Co., Ltd.; Younsoo Kim, Samsung Electronics Co., Ltd.; Cha-Young Yoo, Samsung Electronics Co., Ltd.; Ho-Kyu Kang, Samsung Electronics Co., Ltd.
16:00
Break
See more of: E7: Symposium on Processes at the Semiconductor Solution Interface 5
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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