778
Improved Characteristics of GaSb MOS Capacitors by Ozone Post Deposition Treatment

Wednesday, May 15, 2013
Osgoode Ballroom, Lower Concourse Level (Sheraton)
Lianfeng Zhao , Tsinghua National Laboratory for Information Science and Technology, Beijing, China
Zhen Tan , Tsinghua National Laboratory for Information Science and Technology
Jing Wang , Tsinghua National Laboratory for Information Science and Technology
Jun Xu , Tsinghua National Laboratory for Information Science and Technology, Beijing, China

Abstract:

  • E2-0778 (253.0KB) - Abstract Text
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