917
A Study of SiC:P Selective Epitaxial Growth by Uniform Experimental Design

Wednesday, May 15, 2013
Osgoode Ballroom, Lower Concourse Level (Sheraton)
Yonggen He , School of Microelectronics of Fudan University
Yong Chen , Semiconductor Manufacturing International Corporation
Guohui Cai , Semiconductor Manufacturing International Corporation
Youfeng He , Semiconductor Manufacturing International Corporation
Shaofeng Yu , Semiconductor Manufacturing International Corporation
Jingang Wu , Semiconductor Manufacturing International Corporation
David Wei Zhang , School of Microelectronics of Fudan University
Chenyu Wang , Applied Materials China
Jiyue Tang , Applied Materials China
Ganming Zhao , Applied Materials China
Shiyuan Yang , Semiconductor Manufacturing International Corporation

Abstract: