Wednesday, May 15, 2013: 18:00-20:00
Osgoode Ballroom, Lower Concourse Level (Sheraton)
917
A Study of SiC:P Selective Epitaxial Growth by Uniform Experimental Design (Cancelled)
Evidence of Phosphazene Steps Formation on InP by Cyclic Voltammetry Studies and XPS Analyses in Liquid Ammonia (-55°C)
Christian Njel, PhD student, University of Versailles UMR 8180-Institut Lavoisier de Versailles (78000) France;
Anne-Marie Gonçalves, University of Versailles UMR 8180-Institut Lavoisier de Versailles (78000) France;
Damien Aureau, University of Versailles UMR 8180-Institut Lavoisier de Versailles (78000) France;
Dimitri Mercier, University of Versailles UMR 8180-Institut Lavoisier de Versailles (78000) France;
Arnaud Etcheberry, University of Versailles UMR 8180-Institut Lavoisier de Versailles (78000) France