887
Analog Behavior of Submicron Graded-Channel SOI MOSFETs Varying Channel Length, Doping Concentration and Temperature

Tuesday, May 14, 2013: 10:40
Dominion Ballroom North, Second Floor (Sheraton)
J. P. Nemer , Centro Universitário da FEI, Santo André, Brazil
M. de Souza , Centro Universitário da FEI
D. Flandre , Université Catholique de Louvain
M. A. Pavanello, PhD , Centro Universitário da FEI

Abstract:

  • E6-0887 (409.0KB) - Abstract Text
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