899
Operation of Lateral SOI PIN Photodiodes with Back-Gate Bias and Intrinsic Length Variation

Tuesday, May 14, 2013: 17:40
Dominion Ballroom North, Second Floor (Sheraton)
C. Novo , Centro Universitário da FEI, São Paulo, Brazil
R. Giacomini , Centro Universitário da FEI
A. Afzalian , Université Catholique de Louvain
D. Flandre , Université Catholique de Louvain

Abstract:

  • E6-0899 (118.3KB) - Abstract Text
See more of: Device Physics and Simulations-3
See more of: E6: Advanced Semiconductor-on-Insulator Technology and Related Physics 16
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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