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Comparison of Resistive Switching between Tantalum Oxides Deposited by Atomic Layer Deposition and E-Beam Physical Vapor Evaporation
Comparison of Resistive Switching between Tantalum Oxides Deposited by Atomic Layer Deposition and E-Beam Physical Vapor Evaporation
Tuesday, May 14, 2013: 16:40
Churchill Room, Second Floor (Sheraton)
Abstract:
- A2-0108 (72.9KB) - Abstract Text