Characterization and Related Physics

Tuesday, May 14, 2013: 15:00-16:20
Dominion Ballroom North, Second Floor (Sheraton)
Chairs:
Francisco Gamiz and Joao Antonio Martino
15:00
893
The Generation Rate Analysis of Different S/D Junction Engineering in Scaled UTBOX 1T-DRAM
T. Nicoletti, University of São Paulo, Brazil; K. R. A. Sasaki, University of São Paulo, Brazil; S. D. dos Santos, University of São Paulo; J. A. Martino, University of São Paulo, Brazil; M. Aoulaiche, imec; E. Simoen, imec; Cor Claeys, imec
15:20
894
Spin Lifetime Enhancement by Shear Strain in Thin Silicon-On-Insulator Films
Dmitri Osintsev, MSc, Institute for Microelectronics, TU Wien; Viktor Sverdlov, Institute for Microelectronics, TU Wien; Siegfried Selberherr, Institute for Microelectronics, TU Wien
15:40
895
Determination of Effective Capacitance Area for Pseudo-MOSFET Based Characterization of Bare SOI Wafers by Split-C(V) Measurements
Cristina Fernandez, University of Granada; Noel Rodriguez, University of Granada; Akiko Ohata, IMEP-MINATEC; Amer Diab, IMEP-MINATEC; Francisco Gamiz, University of Granada; Sorin Cristoloveanu, IMEP-MINATEC
16:00
Break
See more of: E6: Advanced Semiconductor-on-Insulator Technology and Related Physics 16
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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