895
Determination of Effective Capacitance Area for Pseudo-MOSFET Based Characterization of Bare SOI Wafers by Split-C(V) Measurements
Determination of Effective Capacitance Area for Pseudo-MOSFET Based Characterization of Bare SOI Wafers by Split-C(V) Measurements
Tuesday, May 14, 2013: 15:40
Dominion Ballroom North, Second Floor (Sheraton)
Abstract:
- E6-0895 (271.9KB) - Abstract Text