Electrical Stability Enhancement of the Thin Filmtransistor With the Back-Channel Deposited By Cosputteringamorphous In-Ga-Zn-O and Siox

1831
Electrical Stability Enhancement of the Thin Filmtransistor With the Back-Channel Deposited By Cosputteringamorphous In-Ga-Zn-O and Siox

Wednesday, October 30, 2013: 11:40

Golden Gate 2, Tower 3, Lobby Level (Hilton San Francisco Union Square)

Hyoung-Rae Lee, B.S. , SAMSUNG DISPLAY, Seoul, South Korea

Ji-Heon Kim, M.S. , Hanyang University

Joo-Hyeong Park, B.S. , Hanyang University, Seoul, South Korea

Yun-Hyuk Ko, M.S. , Hanyang University

Jin-Sung Park, B.S. , Hanyang University

Jea-Gun Park, PhD , Hanyang University, Seoul, South Korea

Abstract: