1847
Enhancement-Mode Algaas/Ingaas Pseudomorphic High-Electron-Mobility Transistor With a Liquid Phase Oxidized GaAs As Gate Oxide
Enhancement-Mode Algaas/Ingaas Pseudomorphic High-Electron-Mobility Transistor With a Liquid Phase Oxidized GaAs As Gate Oxide
Wednesday, October 30, 2013: 14:00
Union Square 21, Tower 3, 4th Floor (Hilton San Francisco Union Square)
Abstract:
- E1-1847 (14.7KB) - Abstract Text