1847
		Enhancement-Mode Algaas/Ingaas Pseudomorphic High-Electron-Mobility Transistor With a Liquid Phase Oxidized GaAs As Gate Oxide
	
					
	
	Enhancement-Mode Algaas/Ingaas Pseudomorphic High-Electron-Mobility Transistor With a Liquid Phase Oxidized GaAs As Gate Oxide
	Wednesday, October 30, 2013: 14:00
	Union Square 21, Tower 3, 4th Floor (Hilton San Francisco Union Square)
	
	
	
	Abstract:
- E1-1847 (14.7KB) - Abstract Text
