Solid State Topics General Session (Oral)
Wednesday, October 30, 2013: 14:00-16:40
Union Square 21, Tower 3, 4th Floor (Hilton San Francisco Union Square)
Chairs:
Kalpathy B Sundaram
and
O. M. Leonte, PhD
14:00
Enhancement-Mode Algaas/Ingaas Pseudomorphic High-Electron-Mobility Transistor With a Liquid Phase Oxidized GaAs As Gate Oxide
Jung-Sheng Huang, Prof., Department of Electronic Engineering, I-Shou University, Kaohsiung, Taiwan;
Kuan-Wei Lee, Prof., Department of Electronic Engineering, I-Shou University, Kaohsiung, Taiwan;
Jyun-Jie Lin, Department of Electronic Engineering, I-Shou University, Kaohsiung, Taiwan;
Yeong-Her Wang, Prof., Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan
14:20
Enhancement-Mode Metal-Oxide-Semiconductor Metamorphic High-Electron-Mobility Transistor
Jung-Sheng Huang, Prof., Department of Electronic Engineering, I-Shou University, Kaohsiung, Taiwan;
Kuan-Wei Lee, Prof., Department of Electronic Engineering, I-Shou University, Kaohsiung, Taiwan;
Hung-Wei Chen, Department of Electronic Engineering, I-Shou University, Kaohsiung, Taiwan;
Yeong-Her Wang, Prof., Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan
15:00
A Physically Based Analytical Model to Predict Quantized Eigen Energies and Wave Functions Incorporating Penetration Effect
Nadim Chowdhury, BSc. in EEE, Bangladesh University of Engineering and Technology;
Imtiaz Ahmed, BSc. in EEE, Bangladesh University of Engineering and Technology;
Zubair Al Azim, BSc. in EEE, Bangladesh University of Engineering and Technology;
Md. Hasibul Alam, BSc. in EEE, Bangladesh University of Engineering and Technology;
Iftikhar Ahmad Niaz, BSc. in EEE, Bangladesh University of Engineering and Technology;
Quazi D. M. Khosru, PhD, Bangladesh University of Engineering and Technology
15:40
A Stacked Sputtered Process for β-FeSi2 Formation
Taichi Inamura, Tokyo Institute of Technology;
Akito Sasaki, Toshiba Materials Co., LTD.;
Katsuaki Aoki, Toshiba Materials Co., LTD.;
Kuniyuki Kakushima, Tokyo Institute of Technology;
Yoshinori Kataoka, Tokyo Institute of Technology;
Akira Nishiyama, Tokyo Institute of Technology;
Nobuyuki Sugii, Tokyo Institute of Technology;
Hitoshi Wakabayashi, Tokyo Institute of Technology;
Kazuo Tsutsui, Tokyo Institute of Technology;
Kenji Natori, Tokyo Institute of Technology;
Hiroshi Iwai, Tokyo Institute of Technology
