1853
Modulation Doped Hydrogenated Amorphous Silicon Germanium Superlattice Contacts and Application to Optoelectronic Devices

Wednesday, October 30, 2013: 16:20
Union Square 21, Tower 3, 4th Floor (Hilton San Francisco Union Square)
Bahman Hekmatshoar , IBM T. J. Watson Research Center, Yorktown Heights, NY
Warren Rieutort-Louis , IBM T. J. Watson Research Center
Davood Shahrjerdi , IBM T. J. Watson Research Center
Richard Haight , IBM T. J. Watson Research Center

Abstract:

See more of: Solid State Topics General Session (Oral)
See more of: E1: Solid State Topics General Session
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
<< Previous Abstract | Next Abstract