1851
A Stacked Sputtered Process for β-FeSi2 Formation

Wednesday, October 30, 2013: 15:40
Union Square 21, Tower 3, 4th Floor (Hilton San Francisco Union Square)
Taichi Inamura , Tokyo Institute of Technology, Yokohama, Japan
Akito Sasaki , Toshiba Materials Co., LTD.
Katsuaki Aoki , Toshiba Materials Co., LTD.
Kuniyuki Kakushima , Tokyo Institute of Technology
Yoshinori Kataoka , Tokyo Institute of Technology
Akira Nishiyama , Tokyo Institute of Technology
Nobuyuki Sugii , Tokyo Institute of Technology
Hitoshi Wakabayashi , Tokyo Institute of Technology
Kazuo Tsutsui , Tokyo Institute of Technology
Kenji Natori , Tokyo Institute of Technology
Hiroshi Iwai , Tokyo Institute of Technology

Abstract:

  • E1-1851 (259.0KB) - Abstract Text
See more of: Solid State Topics General Session (Oral)
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See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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