1929
AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD and BCl3 Gate Recess Etching

Wednesday, October 30, 2013: 08:20
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Richard Meunier , CEA-Leti, Grenoble, France
A. Torres , CEA-Leti
M. Charles , CEA-Leti
E. Morvan , CEA-Leti
M. Plissonier , CEA-Leti
F. Morancho , LAAS-CNRS

Abstract:

  • E3-1929 (310.7KB) - Abstract Text
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