GaN Power Devices 2

Wednesday, October 30, 2013: 08:00-10:00
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Chairs:
Kenneth A. Jones and Gaudenzio Meneghesso, Full Professor
08:00
III-N High-Power Bipolar Transistors
Russell D Dupuis, PhD, Georgia Institute of Technology; Jeomoh Kim, MS, Georgia Institute of Technology; Yi-Che Lee, Georgia Institute of Technology; Zachary Lochner, PhD, Georgia Institute of Technology; Mi-Hee Ji, MS, Georgia Institute of Technology; Tsung-Ting Kao, MS, Georgia Institute of Technology; Jae-Hyun Ryou, PHD, University of Houston; Theeradetch Detchphrom, PhD, Georgia Institute of Technology; Shyh-Chiang Shen, PhD, Georgia Institute of Technology
08:20
AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD and BCl3 Gate Recess Etching
Richard Meunier, CEA-Leti; A. Torres, CEA-Leti; M. Charles, CEA-Leti; E. Morvan, CEA-Leti; M. Plissonier, CEA-Leti; F. Morancho, LAAS-CNRS
08:40
GaN Power Transistors with Integrated Thermal Management
Charles R. Eddy Jr., U.S. Naval Research Laboratory; Travis J Anderson, U.S. Naval Research Laboratory; Andrew D. Koehler, PhD, U.S. Naval Research Laboratory; Neeraj Nepal, American Society for Engineering Education; David J. Meyer, U.S. Naval Research Laboratory; Marko J Tadjer, American Society for Engineering Education; R. Baranyai, University of Bristol; J. W. Pomeroy, University of Bristol; Martin Kuball, University of Bristol; Tatyana I Feygelson, U.S. Naval Research Laboratory; Bradford B Pate, U.S. Naval Research Laboratory; Michael A Mastro, PhD, U.S. Naval Research Laboratory; Jennifer K. Hite, U.S. Naval Research Laboratory; Mario G. Ancona, U.S. Naval Research Laboratory; Fritz J Kub, U.S. Naval Research Laboratory; Karl D Hobart, U.S. Naval Research Laboratory
09:00
Ammonothermal Bulk GaN Substrates for Power Electronics
Mark P. D'Evelyn, Soraa, Inc.; Dirk Ehrentraut, Soraa, Inc.; Wenkan Jiang, Soraa, Inc.; Derrick S. Kamber, Soraa, Inc.; Bradley C. Downey, Soraa, Inc.; Rajeev T. Pakalapati, Soraa, Inc.; Hak Do Yoo, Soraa, Inc.
09:20
1000V Vertical JFET Using Bulk GaN
Quentin Diduck, Ph.D., Avogy; Hui Nie, Ph.D., Avogy; Brian Alvarez, M.S., Avogy; Andrew Edwards, Ph.D., Avogy; David Bour, Ph.D., Avogy; Ozgur Aktas, Ph.D., Avogy; Don Disney, Ph.D., Avogy; Isik C. Kizilyalli, Ph.D., Avogy
09:40
Multi-Gate Device Architectures for GaN based Power Switching Devices
Leo Mathew, Applied Novel Device Inc.; Rajesh Rao, Applied Novel Device Inc.; Ed Piner, Texas State University; Jerry G. Fossum, University of Florida; Sanjay K Banerjee, The University of Texas at Austin