1991
Solid-State Reactions in Resistive Random Access Memory (ReRAM) Induced By Electric Filed and Process Atmosphere

Wednesday, October 30, 2013: 10:30
Golden Gate 1, Tower 3, Lobby Level (Hilton San Francisco Union Square)
Hisashi Shima , National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan
H. Akinaga , AIST

Abstract:

See more of: ReRAM 1
See more of: E5: Nonvolatile Memories
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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