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High Voltage InAlN/GaN HFETs Achieved by Schottky-Contact Technology for Power Applications

Wednesday, October 30, 2013: 14:20
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Qi Zhou , Univ. of Electronic Science and Technology of China, Chengdu, China
Wanjun Chen , Univ. of Electronic Science and Technology of China
Shenghou Liu , Hong Kong Univ. of Science and Technology
Bo Zhang , Univ. of Electronic Science and Technology of China
Zhihong Feng , Hebei Semiconductor Research Inst.
Shujun Cai , Hebei Semiconductor Research Inst.
Kevin J. Chen , Hong Kong Univ. of Science and Technology

Abstract:

See more of: Power Device Reliability 2
See more of: E3: GaN and SiC Power Technologies 3
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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