Power Device Reliability 2

Wednesday, October 30, 2013: 14:00-15:20
Continental 9, Tower 3, Ballroom Level (Hilton San Francisco Union Square)
Chairs:
A. Lelis and Sunny Kedia
14:00
1941
Heat Dissipation in GaN Based Power Electronics
Zonghui Su, PhD. in progress, Carnegie Mellon University; Jonathan A Malen, PhD., Carnegie Mellon University
 
1942
High Voltage InAlN/GaN HFETs Achieved by Schottky-Contact Technology for Power Applications (Cancelled)
14:40
1943
Interaction of Defects with Quantum Well States: Electrostatic-Dependant Response Time for Traps in AlGaN/GaN HEMTs
Matthew J. Marinella, Sandia National Laboratories; Sandeepan DasGupta, Sandia National Laboratories; Robert J. Kaplar, Sandia National Laboratories; Min Sun, Massachusetts Institute of Technology; Stan Atcitty, Sandia National Laboratories; Tomas Palacios, Massachusetts Institute of Technology
15:00
1944
Monolithic Integration of High Temperature Silicon Carbide Integrated Circuits
Mihaela Alexandru, PhD, Instituto de Microelectrónica de Barcelona; Viorel Banu, Instituto de Microelectrónica de Barcelona; Josep Montserrat, PhD, Instituto de Microelectrónica de Barcelona; Philippe Godignon, Professor, Instituto de Microelectrónica de Barcelona; José Millán, Professor, Instituto de Microelectrónica de Barcelona
See more of: E3: GaN and SiC Power Technologies 3
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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