ReRAM 2

Thursday, October 31, 2013: 08:00-10:10
Golden Gate 1, Tower 3, Lobby Level (Hilton San Francisco Union Square)
Chairs:
Y. B. Kim , H. Akinaga and Hisashi Shima
08:40
Temperature Dependent Studies to Understand the Mechanism of Switching in Resistive Random Access Memory Devices
Branden Long, PhD, University of Toledo; Wenbo Chen, MS, University of Toledo; Yibo Li, MS, University of Toledo; Saptarshi Mandal, B.Tech., University of Toledo; Gennadi Bersuker, PhD, Sematech Incorporated; David Gilmer, PhD, Sematech Incorporated; Rashmi Jha, PhD, University of Toledo
09:10
Investigation of Thomson Effect in Cu/TaOx/Pt Resistive Switching Memory
Tong Liu, Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University; Tanmay Potnis, Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University; Yuhong Kang, Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University; Sarah El-Helw, Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University; Marius Orlowski, Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University
09:30
First-Principles Study of Oxygen Vacancy and Hydrogen Impurity Effects in the Pseudo-Hexagonal Ta2O5
J. Y. Kim, Stanford University; B. Magyari-Köpe, Stanford University; A. Hazeghi, Stanford University; K. J. Lee, SK hynix; H. S. Kim, SK hynix; S. H. Lee, SK hynix; Y. Nishi, Stanford University
09:50
A CMOS Compatible, Forming Free TaOx ReRAM
Andrew J Lohn, Sandia National Laboratories; James E Stevens, Sandia National Laboratories; Patrick R Mickel, Sandia National Laboratories; David R Hughart, Sandia National Laboratories; Matthew J. Marinella, Sandia National Laboratories