Thursday, October 31, 2013: 08:00-10:10
Golden Gate 1, Tower 3, Lobby Level (Hilton San Francisco Union Square)
Chairs:
Y. B. Kim
,
H. Akinaga
and
Hisashi Shima
08:40
Temperature Dependent Studies to Understand the Mechanism of Switching in Resistive Random Access Memory Devices
Branden Long, PhD, University of Toledo;
Wenbo Chen, MS, University of Toledo;
Yibo Li, MS, University of Toledo;
Saptarshi Mandal, B.Tech., University of Toledo;
Gennadi Bersuker, PhD, Sematech Incorporated;
David Gilmer, PhD, Sematech Incorporated;
Rashmi Jha, PhD, University of Toledo
09:10
Investigation of Thomson Effect in Cu/TaOx/Pt Resistive Switching Memory
Tong Liu, Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University;
Tanmay Potnis, Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University;
Yuhong Kang, Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University;
Sarah El-Helw, Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University;
Marius Orlowski, Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University
09:50
A CMOS Compatible, Forming Free TaOx ReRAM
Andrew J Lohn, Sandia National Laboratories;
James E Stevens, Sandia National Laboratories;
Patrick R Mickel, Sandia National Laboratories;
David R Hughart, Sandia National Laboratories;
Matthew J. Marinella, Sandia National Laboratories