Emerging Memories

Wednesday, October 30, 2013: 16:00-17:50
Golden Gate 1, Tower 3, Lobby Level (Hilton San Francisco Union Square)
Chairs:
Takasumi Ohyanagi and Y. B. Kim
16:00
1999
(Invited) Opportunities and Challenges of Atom Switch for Low-Power Programmable Logic
Munehiro Tada, Ph.D., Low-power Electronics Association & Project (LEAP); Toshitsugu Sakamoto, Low-power Electronics Association & Project (LEAP); Hiromitsu Hada, Low-power Electronics Association & Project (LEAP)
16:30
2000
Ferroelectric Gate ZnO Thin Film Transistor With An MgO Buffer Layer
Bo Xiao, Ph.D, Norfolk State University
16:50
2001
Polymer:Nanoparticle Nonvolatile Memory Devices With Electrode-Sensitive Resistive Switches
Jianyong Ouyang, PhD, National University of Singapore
17:10
2002
Flexible Conductive-Bridging Random-Access Memory Cell Fabricated With Stacked Polymer Electrolyte and Conductive Polymer
Myung-JIn Song, B.S., Hanyang University; Hyun-Min Seung, M.S., Hanyang University; Kyoung-Cheol Kwon, M.S., Hanyang University; Jong-Sun Lee, B.S., Hanyang University; Dong-Hyun Park, B.S., Hanyang University; Jea-Gun Park, PhD, Hanyang University
17:30
2003
Conductive Bridging Random Access Memory Cell Fabricated With Top Ag Electrode, Polyethylene Oxide Layer, and Bottom Pt Electrode
Hyun-Min Seung, M.S., Hanyang University; Dong-Hyun Park, B.S., Hanyang University; Myung-JIn Song, B.S., Hanyang University; Ki-Hyun Kwon, B.S., Hanyang University; Han-Vit Jeoung, B.S., Hanyang University; Jea-Gun Park, PhD, Hanyang University
See more of: E5: Nonvolatile Memories
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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